The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 1986
Filed:
Mar. 08, 1984
Applicant:
Inventor:
Tetsuya Iizuka, Kawasaki, JP;
Assignee:
Tokyo Shibaura Denki Kabushiki Kaisha, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 231 ; 357 237 ; 357 41 ; 357 65 ; 357 86 ;
Abstract
A source region and a drain region are formed in a semiconductor layer, a thin insulating layer of SiO.sub.2 is formed on the semiconductor layer, and a gate electrode is formed thereover. Al metal forms ohmic contacts with the source and drain regions to provide a source electrode and a drain electrode, respectively. Al diffused in the drain region remains within the drain region, and the drain region and the substrate region form a p-n junction. Al diffused in the source region traverses the source region and reaches the substrate region to form an ohmic contact between the source region and the substrate region.