The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 1986
Filed:
Aug. 12, 1983
Shigenobu Yamakoshi, Ebina, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A transverse junction strip structure light-emitting semiconductor device (laser) includes a laminated active layer of a multiquantum well structure. A P-type region of the semiconductor device is formed by doping P-type impurities into portions of the active layer and the clad layers between which the active layer is sandwiched. The P-type region includes a mixture region which is formed by diffusing P-type impurities into first semiconductor ultrathin layers serving as wells and second semiconductor ultrathin layers serving as barriers. The mixture region has a larger band gap than the first semiconductor ultrathin layers and forms a heterojunction with the first semiconductor ultrathin layers.