The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 1986
Filed:
Jan. 22, 1986
Applicant:
Inventor:
Takamasa Sakai, Koriyama, JP;
Assignee:
Clarion Co., Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 14 ; 357 15 ; 357 236 ; 357 51 ;
Abstract
A semiconductor device with a multi-electrode construction equivalent to a conventional variable capacitance diode in function is disclosed. The semiconductor device is characterized in that a capacitance read-out portion with a capacitance read-out electrode and a plurality of depletion layer control portions with control electrodes, respectively, are formed in a bulk of a semiconductor single crystal, a depletion layer within said bulk is changed in width, when a plurality of said depletion layer control portions are reverse-biassed in turn through said control electrodes, whereby a change in capacitance can be read out through said capacitance read-out electrode.