The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 1986
Filed:
Jul. 25, 1984
Applicant:
Inventors:
Tomoo Yanase, Tokyo, JP;
Ikuo Mito, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156612 ; 156D / ; 372 96 ;
Abstract
A method of growing an InGaAsP layer on a corrugated InP substrate as a part of a procedure for producing a DFB semiconductor laser includes the step of heating the substrate up to temperatures approaching 700.degree. C. while holding the substrate in an atmosphere which contains arsine and phosphine. The substrate is subsequently moved to InGaAsP and InP growth chambers for growth of these respective layers. The method of the invention is advantageous in that the corrugated structure of the substrate is maintained intact throughout the procedure.