The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 1986
Filed:
Feb. 22, 1983
Applicant:
Inventor:
Kazuhiko Hashimoto, Tokyo, JP;
Assignee:
Tokyo Shibaura Denki Kabushiki Kaisha, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 42 ; 357 231 ; 357 41 ; 357 88 ;
Abstract
A complementary-symmetry metal-oxide semiconductor device is made of a semiconductor substrate of a first conductivity type and well regions of a second conductivity type formed in the surface region of the semiconductor substrate. The well regions consist of a first well region and a second well region having a lower resistance per unit area than the first well region. An input-output peripheral circuit is formed of the second well region and the substrate. An internal circuit is formed of the first well region and the substrate.