Analog storing and reproducing apparatus utilizing non-volatile memory

Abstract

An analog value storing apparatus comprises a semiconductor field-effect device, including a substrate, a source and drain formed to define a channel region, a floating gate embedded in an insulating layer on the channel region, a control gate connected to the ground on the insulating layer above the floating gate, a write voltage source coupled to the source to supply a write voltage to charge the floating gate, a resistor having a relatively high resistance value inserted between the write voltage source and the source, and an analog value voltage source connected to the drain. As a result, the floating gate begins to be charged with the write voltage and the analog voltage and stops being charged with the voltage at the source determined as voltage division of the write voltage and the analog voltage by the high resistance value of the resistor and the internal resistance value of the device. Preferably, an array of a plurality of such devices is used and an analog signal is stored in the form of a series of sampled analog values sampled from the analog signal at the timing of addressing while such devices are addressed sequentially. The stored analog values are read out while the devices are addressed, whereby and original analog signal is reproduced.