The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 1986
Filed:
Dec. 18, 1984
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor integrated circuit structure including a semiconductor substrate having a large area adapted for a large scale integration, a circuit formed in the substrate for generating a pair of complementary signals, a pair of common potential level layers with an electrically insulating layer interposed therebetween, the common potential level layers being formed above and being electrically insulated from the substrate, and a pair of electric conductor pattern layers formed in the insulating layer for conducting the pair of complementary signals. The electric conductor pattern layers are arranged so as to be overlapped with each other in a direction substantially perpendicular to the large area substrate and so as to be substantially parallel with the large area substrate. The overall length of the electric conductor pattern layers is such that when an electric signal is conducted through an electric conductor in an IC having a length equal to the above-mentioned overall length, attenuation of the signal thereby is not negligible.