The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 1986
Filed:
Jun. 27, 1985
Jeffrey A Kash, Pleasantville, NY (US);
Thomas F Kuech, Ossining, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Picosecond response photoconductors and photoresponsive elements can be provided that retain high carrier mobility and yet have short lifetime by providing on a crystal mismatched substrate a textured layer of domain regions wherein the domain size is such that the lifetime is proportional to the square of the size divided by the diffusion coefficient of the semiconductor material. The crystalline orientation in the domains with respect to the substrate is maintained. An embodiment is an approximately 0.1 micron thick textured layer of <111> GaAs grown on a <0001> hexagonal monocrystalline Al.sub.2 O.sub.3 having domains approximately 1.0 micron with a carrier lifetime about 5 picoseconds and a carrier mobility of about 80 cm.sup.2 volt.sup.-1 sec.sup.-1.