The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 1986
Filed:
Jun. 24, 1985
Akihiko Tani, Tachikawa, JP;
Takashi Aoyagi, Musashino, JP;
Shuji Ikeda, Koganei, JP;
Kouichi Nagasawa, Kunitachi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A process for producing semiconductor devices having excellent electric characteristics such as high threshold voltage Vth and small leakage current, maintaining high yields while preventing the occurrence of thermal etching at the time of heat-treatment to form a well diffusion layer in semiconductor devices such as CMOS IC's. Namely, a semiconductor wafer having a silicon dioxide film formed on the main surface thereof is heat-treated at a high temperature in an inert gas atmosphere. In this case, oxygen is contained in small amounts in the inert gas, so that pinholes formed in the silicon dioxide film are buried therein by the action of oxygen gas. Therefore, thermal etching is not generated by the high temperature inert gas, and the yields of semiconductor devices can be increased.