The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 1986
Filed:
Jun. 18, 1982
Applicant:
Inventor:
Yoshitaka Sasaki, Yokohama, JP;
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
29589 ; 29571 ; 2957 / ; 29578 ; 148-15 ; 148D / ; 148D / ; 148D / ; 357 47 ; 357 59 ; 357 71 ;
Abstract
A method of forming electric conductive patterns comprising the steps of forming first conductive patterns on a semiconductor substrate directly or through an insulating layer with first insulating film being formed thereon, selectively forming second conductive patterns, forming insulation layers on side surfaces of said second conductive patterns, thereby electrically insulating said second conductive patterns from said first conductive patterns through said insulation layers in a self-aligned manner. An semiconductor device having electric conductive patterns formed by above-mentioned method.