The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 1986
Filed:
Feb. 14, 1985
Applicant:
Inventors:
Tadashi Komatsubara, Tokyo, JP;
Tetsuo Sadamasa, Chigasaki, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 17 ; 357 16 ;
Abstract
A double heterostructure light-emitting semi-conductor device includes a p-GaAs substrate having a first electrode formed on one surface and a current confining layer on the other surface; a confined current conduction layer; and a light-emitting layer structure formed on the current confining layer and the confined current conduction layer. A capping layer of GaAs having a second electrode is formed on the light-emitting layer structure. A light exit window layer for exiting the emitted light is constructed by a thin film of the capping layer.