The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 1986

Filed:

Apr. 18, 1985
Applicant:
Inventors:

Yasushi Saotome, Tokyo, JP;

Hiroshi Gokan, Tokyo, JP;

Kazuhide Saigo, Tokyo, JP;

Masayoshi Suzuki, Tokyo, JP;

Yoshitake Ohnishi, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C08G / ; C08G / ; C08G / ;
U.S. Cl.
CPC ...
430192 ; 430106 ; 430190 ; 430191 ; 430314 ; 430323 ; 430905 ; 528 25 ; 422 62 ; 422148 ;
Abstract

Disclosed is a novel novolak resin comprising structural units having a trimethylsilyl group. A resist material highly resistive to dry etching is obtained by adding a photosensitive diazo compound to this novolak resin. The resist material is useful in various lithography methods to form a positive resist pattern. This resist material is used in a pattern forming method of a two-layer type, in which a fine pattern is formed in a thin film of the resist material by lithography and then transferred into an underlying thick organic polymer layer by dry etching of the underlying layer with the resist pattern as mask. Curing of the resist pattern by irradiation with deep UV rays is effective for further improvement in the precision of the transferred pattern.


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