The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 1986
Filed:
Mar. 31, 1983
Seiko Epson Kabushiki Kaisha, Tokyo, JP;
Abstract
The thin film transistor comprises a plurality of individual thin film transistors on a common insulating substrate with the plurality of individual thin film transistors being connected together in series. The gate electrode of each individual transistor of the plurality of thin film transistors is connected to form one common gate electrode for the overall transistor. Leakage current in the OFF condition is substantially reduced. Identical performance is achieved from the transistor with interchangeability in designating source and drain terminals, when a symmetry is provided such that the i-th transistor in a series of N is physically identical to the (N-i+1)-th transistor in the overall transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile