The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 1986
Filed:
Oct. 18, 1984
Hiroshi Okuda, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A semiconductor light-emitting device according to the present invention is made by forming an undoped In.sub.1-X Ga.sub.X As.sub.1-Y P.sub.Y active layer on a n-InP clad layer, a p-In.sub.1-X Ga.sub.X As.sub.1-Y P.sub.Y active layer on said undoped active layer, and a p-n junction position in the interface between said n-InP layer and said undoped In.sub.1-X Ga.sub.X As.sub.1-Y P.sub.Y active layer or in the neighborhood thereof. By this structure, the heretofore inevitable problem of remote junction can be solved and the half value width of the light-emitting spectrum can be reduced. Therefore, the semiconductor light-emitting device according to the present invention provides higher response frequency and larger light-emitting output than the conventional semiconductor light-emitting device.