The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 1986
Filed:
May. 09, 1984
Herman P Schutten, Milwaukee, WI (US);
James A Benjamin, Waukesha, WI (US);
Robert W Lade, Fort Myers, FL (US);
Eaton Corporation, Cleveland, OH (US);
Abstract
Lateral planar FET structure (2) is disclosed for bidirection power switching, including AC application. Voltage blocking capability is enhanced in the lateral current flow device (2) by field shaping in the drift region (22). In the OFF state, the field shaping region (24) straightens field lines and prevents gradient induced depletion and unwanted inversion of conductivity type along a lateral drift region portion (54) extending beneath a top major surface (28) of the substrate between channel-containing regions (6) and (8).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile