The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 1986
Filed:
Sep. 17, 1984
Kazuyoshi Kobayashi, Kanagawa, JP;
Yoshio Harada, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A manufacturing method of a semiconductor device is disclosed which includes the steps of forming oxide layers on a major surface of a substrate at first and second portions, forming first and second semiconductor layers, each having predetermined conductivity types and with predetermined patterns on the oxide layers of the first and second portions, forming a first region by introducing an impurity of the first conductivity type into the substrate while using the first semiconductor layer as a mask, etching out the oxide layer on the second portion by using the second semiconductor layer as a mask, forming a second region by introducing an impurity of the second conductivity type into the substrate while using the second semiconductor layer as a mask, and forming oxide layers on the surfaces of the first semiconductor layer, the second semiconductor layer and the second region by a thermal oxidization process.