The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 1986

Filed:

Oct. 15, 1985
Applicant:
Inventors:

Kenichi Hijikata, Urawa, JP;

Katsuyuki Sato, Ohmiya, JP;

Hitoshi Maruyama, Kuki, JP;

Ryoko Furuhashi, Kumagaya, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C22C / ; C22C / ; B22F / ;
U.S. Cl.
CPC ...
75246 ; 419 45 ; 419 50 ; 420435 ; 420 83 ; 148425 ; 148301 ;
Abstract

A novel composite target material that is composed of a rare earth metal and a transition metal (iron-group metal) and which is used in the formation of a thin magnetooptical recording film by sputtering is disclosed. Also disclosed is a process for producing such composite target material. The process comprises the steps of providing a rare earth metal and an iron-group transition metal as separate entities, mixing these metals without alloying, and hot-forming the mixture at a temperature lower than the eutectic point of the system of metallic components in the mixture, thereby forming an intermetallic compound at the interface between the rare earth metal and the transition metal while causing said metals to be bonded together. The target material produced by this process contains 30-50 wt % of the rare earth metal, with the balance being made of the iron-group transition metal and incidental impurities. The structure of the target material is also characterized by the presence of an intermetallic compound phase at the interface between the particles of the rare earth metal and those of the transition metal. This composite target material has sufficiently high density, high strength, high deflective strength and good resistance to thermal shock to permit rotation and inversion during sputtering procedures without cracking. Furthermore, the oxygen content of this target material is no higher than 0.3 wt %. Therefore, a perpendicular magnetization film suitable for use in magnetooptical recording can be readily formed by sputtering the target material of the present invention. As a further advantage, the film deposition rate that can be achieved with this target material is significantly fast in comparison with the conventional alloy target material.


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