The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 1986
Filed:
Dec. 02, 1983
Shlomo Margalit, Pasadena, CA (US);
Liew-Chuang Chiu, Milford, CA (US);
John S Smith, Pasadena, CA (US);
Amnon Yariv, San Marino, CA (US);
California Institute of Technology, Pasadena, CA (US);
Abstract
Alternating layers of N+ GaAs (80 .ANG.) and N+ Ga.sub.1-x Al.sub.x As (300 .ANG.), all heavily doped with a uniform flux of Sn, and biased by 2V, provide a multiple quantum-well heterojunction structure for infrared detection with cutoff wavelength established by the choice of the value x which defines the depth of the wells. Fine tuning of the cutoff wavelength may be achieved by varying the bias voltage. By biasing the individual quantum-well layers progressively through a voltage divider, an avalanche mechanism may be achieved in the detector for signal amplification. The detectors may be fabricated in large two-dimensional arrays.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile