The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 1986
Filed:
Aug. 17, 1984
Andre Scavennec, 75013 Paris, FR;
David Ankri, 75015 Paris, FR;
Other;
Abstract
A phototransistor comprising a substrate (9), a collector layer (2), a base layer (3), and an emitter layer (4) is disclosed. The base layer (3) is of a first composite III-V semiconductor material with a first type of doping and the emitter layer (4) is of a second composite III-V semiconductor material. A diffusion well (6), of the first type of doping extends on a main part of the emitter layer (4) down to the base layer. The remaining part of the emitter layer (4) is of a second type of doping. The main part of the emitter layer (4) has an area at least 100 times larger than the area of the remaining part. A contact layer with the second type of doping is deposited on the remaining part of the emitter layer (4) with an emitter contact on the contact layer, and a base contact on an extremity of the diffusion well (6). Such a phototransistor thus comprises a heterojunction transistor under the emitter contact and a homojunction photodiode under the diffusion well (6), and the diffusion well (6) is transparent in most of its thickness to light radiation to be detected.