The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 1986
Filed:
Oct. 04, 1984
Henricus G Maas, Eindhoven, NL;
Jan W Slotboom, Eindhoven, NL;
Johannes A Appels, Eindhoven, NL;
Kazimierz Osinski, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A method of manufacturing a semiconductor device having narrow, coplanar, silicon electrodes which are separated from each other by grooves or slots having a width in the submicron range. The electrodes are alternatively covered by an oxide and by an oxidation-preventing layer, such as silicon nitride. According to the invention, a first and second electrode which are both covered with one of these layers, and which enclose a third electrode covered by the other of these layers, are first interconnected inside a connection region. Two of the three electrodes are separated from the connection region by etching. By selective etching, overlapping contact windows are provided on all three electrodes, and inside the contact windows etching of the groove is omitted.