The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 1986
Filed:
May. 10, 1985
Applicant:
Inventor:
Lubomir L Jastrzebski, Plainsboro, NJ (US);
Assignee:
RCA Corporation, Princeton, NJ (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
29571 ; 2957 / ; 2957 / ; 148175 ; 148187 ;
Abstract
A method for forming a CMOS FET structure includes the steps of forming an apertured insulating layer on a silicon substrate and epitaxially forming a monocrystalline silicon island of first conductivity type through an aperture therein. The exposed surface of the silicon island is then thermally oxidized and the portion of the insulating layer not covered by the oxide is removed. A monocrystalline silicon island of second conductivity type is then formed adjacent to the oxidized silicon island of first conductivity type.