The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 1986
Filed:
Oct. 11, 1984
Kohei Matsuda, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A complementary type MOS field effect transistor circuit includes an input terminal, a P-MOS FET, an N-MOS FET connected in series with the P-MOS FET, a first resistor connected between the input terminal and the gate of the P-MOS FET, a second resistor connected between the input terminal and the gate of the N-MOS FET, a first diode connected between the gate of the P-MOS FET and a high voltage power supply terminal and a second diode connected between the gate of the N-MOS FET and a low voltage power supply terminal. The gate protection circuit of the circuit has a first part of the first resistor and the second diode and a second part of the second resistor and the second diode.