The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 1986
Filed:
Jun. 18, 1984
Shuji Yazu, Hyogo, JP;
Shuichi Satoh, Hyogo, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A synthetic diamond heat sink which can be easily shaped and which ensures a consistently high thermal conductivity in which the diamond is a Type Ib diamond containing 50 to 100 ppm nitrogen. The synthetic diamond crystal has a shape similar to the crystal structure of a hexahedron synthesized by heating a carbon source, a solvent and a diamond seed crystal and the stability region of diamond at a high pressure. The resulting temperature gradient between the carbon source and seed crystal is adjusted to cause diamond growth on the seed crystal. The solvent employed is selected from the group of cobalt, nickel, iron, chromium and manganese. The diamond crystal is caused to grow as the temperature of the solvent is gradually decreased at a rate of 0.15 to 10.degree. C. per hour so that the temperature of the seed crystal and growning diamond crystal is within a range the lower limit of which is a temperature 20.degree. C. higher than the melting point of the solvent and carbon source system and the upper limit of which is a temperature 40.degree. C. higher than the lower limit.