The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 1986
Filed:
Feb. 11, 1985
Michael A Damiano, Germantown, WI (US);
Richard F Schmerda, Oak Creek, WI (US);
Eaton Corporation, Cleveland, OH (US);
Abstract
A power MOSFET reversing H-drive system having a first pair of N-channel and P-channel MOSFETs (Q1,Q2) connected in series with a load (LD1,LD2) to a power supply source (T1) and a second like pair of N-channel and P-channel MOSFETs (Q3,Q4) connected in series with the load (LD1,LD2) to the source (T1), each pair having a resistance voltage divider (R1-R2, R5-R6) for providing the P-channel MOSFET (Q1,Q3) with a different voltage level gate signal from the logic level input signal by which the N-channel MOSFET (Q2,Q4) is gated, an overvoltage protector (Z1,Z2) allowing extension of the supply voltage (T1) range under which the system is operable, and the on-state resistances and the flyback current capability of the intrinsic diodes (ID1-ID4) being matched to the size of the load to be driven.