The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 1986
Filed:
Nov. 10, 1983
Applicant:
Inventors:
Gee-Kung Chang, New Providence, NJ (US);
Adrian R Hartman, New Providence, NJ (US);
McDonald Robinson, Chester, NJ (US);
Assignee:
AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 30 ; 357 13 ; 357 58 ;
Abstract
High-speed p-i-n and avalanche photodetectors (photodiodes) use a heavily doped buried layer to greatly limit minority carriers generated by incident light in the buried layers and the substrates of the devices from reaching the cathodes and thus enhances response time while substantially decreasing dark current. A p-i-n diode of this type with a 1.1 square millimeter active area can operate with 4 volt reverse bias and is capable of having edge rise and fall times in the 4 nanosecond range.