The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 1986
Filed:
Dec. 12, 1984
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A high withstand voltage Darlington transistor circuit is comprised of a Darlington transistor and a bypass circuit. This bypass circuit is comprised of a bypass transistor whose collector is connected to the base of an earlier stage transistor of the transistors which make up the Darlington transistor and whose emitter is connected to the base of a later stage transistor. The base of the bypass transistor is connected to the collector of the Darlington transistor via a diode and the resistor. When the collector-emitter voltage of the Darlington transistor crosses a specified value, the bypass transistor operates and a base current of the Darlington transistor is supplied to the base of the later stage transistor without being supplied to the earlier stage transistor. The result is that the current amplification ratio of the Darlington transistor is substantially decreased, and the withstand voltage is substantially increased.