The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 1986

Filed:

Jun. 12, 1985
Applicant:
Inventor:

Robert E Hetrick, Dearborn Heights, MI (US);

Assignee:

Ford Motor Company, Dearborn, MI (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01N / ; G01N / ; G01N / ;
U.S. Cl.
CPC ...
204 / ; 204400 ; 204431 ;
Abstract

A planar photoelectrochemical sensing structure includes a thin, porous layer of photoactive semiconductor powder material deposited on an electronically conducting catalyst film which has been fabricated in two regions separated by a narrow stripe. Using incident light absorbed by the semiconductor, the structure is suited to photosensitizing redox reactions of chemical species introduced to the structure in an aqueous gas-phase environment. If photocarriers generated by the incident light are prevented from reaching one of the catalyst regions, for example by use of a light shield, then an EMF develops between the two catalyst regions. The magnitude of the EMF varies with the concentration of one of the gaseous reactants and thus provides a measure of the concentration.


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