The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 1986
Filed:
Oct. 22, 1980
Hubert Patalong, Munich, DE;
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Abstract
A thyristor has a semiconductor body which includes first and second base layers contacting one another, an n-emitter layer contacting the first base layer, a first electrode on the n-emitter layer, a p-emitter layer contacting the second base layer, a second electrode on the p-emitter layer, and controllable metal insulator-semiconductor emitter short circuit structures located at at least one boundary surface of the semiconductor body. Each of the short circuit structures includes first and second semiconductor regions of a first conductivity type, the first region contacting the first electrode, and an intermediate third semiconductor region of a second opposite conductivity type between the first and second regions and extending to the boundary surface. An insulated gate is carried over the third region. An emitter layer associated with the metal-insulator-semiconductor structures is divided into a plurality of emitter zones which are respectively provided with portions of the electrode contacting said emitter layer, and the metal-insulator-semiconductor structures are located at the edges of the emitter zones. A common terminal is connected to the insulated gates for receiving a voltage pulse to neutralize the short circuits.