The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 1986
Filed:
Jul. 30, 1984
Applicant:
Inventors:
John D Macdougall, Westboro, MA (US);
Richard B Cooper, Shrewsbury, MA (US);
Assignee:
Sprague Electric Company, North Adams, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 40 ; 357 51 ; 357 54 ;
Abstract
High voltage integrated circuit field plates that are connected directly to the epitaxial pockets over which they lie, are formed simultaneously with high resistivity polysilicon resistors and are insulated from cross-over metal by a dual insulation of silicon dioxide and silicon nitride. Without adding to these process steps, MNS capacitors are formed that have a higher packing density than their MOS counterparts. The space saving MNS capacitors are thus space-wise and process-wise compatible with the polysilicon field plates that occupy much less chip real estate than do diffused channel stops.