The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 1986
Filed:
May. 07, 1984
Jean-Marc Dortu, Paris, FR;
Erhard Kohn, Orsay, FR;
Thomson-CSF, Paris, FR;
Abstract
The invention relates to a field effect transistor for ultra-high frequencies, whose gate has a metal-insulator structure with a metal leak. This transistor has a substrate, an active layer, a source electrode and a drain electrode. Thus, its gate comprise a first metal coating forming a Schottky junction with the active layer, a dielectric layer having a controlled leak and a second control gate metal coating. The leak in the dielectric is adjusted in such a way that the Schottky interface and the control gate are in electrical balance at high frequencies. The dielectric is a metal-rich, non-stoichiometric oxide or nitride. Application to high-speed integrated circuits on GaAs.