The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 1986
Filed:
Apr. 26, 1985
Lawrence V Gregor, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention discloses multi-layered resist structures and methods of producing them which can be used in electronic device lithography to produce micrometer and submicrometer geometries. The resist structure comprises two or more layers at least one of which is a metallic material and at least one of which is a radiation-sensitive material. The metallic layer exhibits both a high atomic number and a high density. The metallic material is positioned relative to the radiation-sensitive polymeric material so that it can be used to control reflection and backscatter of radiation used to create a latent image within the radiation-sensitive polymeric material. The thickness of the metallic layer is determined by the amount of reflection desired and the amount of backscatter permitted into the layer of radiation-sensitive polymeric material.