The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 1986
Filed:
Jul. 30, 1984
Applicant:
Inventors:
Assignee:
Tokyo Shibaura Denki Kabushiki Kaisha, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 71 ; 357 239 ; 357 59 ;
Abstract
A MOS transistor integrated circuit device has at least one interconnection layer crossing the source and drain regions of a MOS transistor such that it overlies these source and drain regions. An electrical conductive layer is formed on the surface of at least one of the source and drain regions of the MOS transistor. The electrical conductive layer crosses the interconnection layer with an insulating layer therebetween such that it underlies the interconnection layer. The electrical conductive layer is separated from source and drain takeout electrodes and electrically insulated from the interconnection layer.