The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 1986
Filed:
Aug. 25, 1983
Shiro Hine, Minoo, JP;
Hidenobu Ishikura, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A solid-state image sensor comprises an n-type silicon substrate (11), a p-type silicon layer (12) formed on the substrate (11), a plurality of nMOS transistors (1), a field insulating film (13) for separating the nMOS transistors (1) and a buried insulating film (20) provided between the substrate (11) and the field insulating film (13). The buried insulating film (20) serve to prevent electrons from flowing between the adjacent nMOS transistors (1). Accordingly, occurrence of a color mixture phenomenon, a blooming phenomenon or a smear phenomenon can be suppressed. In addition, when a p-type junction layer (21) is provided on the substrate (11) and a bias power supply (19) is connected between them, and when the voltage is adjusted, the red color sensitivity of a photodiode consisting of an n-type source region (16) in each nMOS transistor (1) can be uniformly and easily adjusted.