The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 1986

Filed:

Oct. 22, 1980
Applicant:
Inventor:

Hubert Patalong, Munich, DE;

Assignee:

Siemens Aktiengesellschaft, Berlin & Munich, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K / ;
U.S. Cl.
CPC ...
3072 / ; 357 234 ; 357 2312 ; 357 39 ; 357 86 ;
Abstract

In a triac having a multilayer semiconductor body arranged between two electrodes, in which a first layer forms the p-base layer of a first thyristor and the p-emitter layer of a second thyristor, a second layer represents the n-base layers of both thyristors and a third layer forms the p-emitter layer of the first thyristor and the p-base layer of the second thyristor, and in which the n-emitter layer of the first thyristor is disposed in the first layer and an n-emitter of the second thyristor is disposed in the third layer, a gate-controlled MIS structures are provided which contain controllable emitter short circuit paths, the provision being at the n-emitter layer of the first thyristor and at the p-emitter layer of the second thyristor in the boundary area of both thyristors.


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