The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 1986
Filed:
Dec. 06, 1984
Applicant:
Inventors:
Uppala V Choudary, Chatsworth, CA (US);
Yuh-Han Shing, Thousand Oaks, CA (US);
Richard R Potter, Chatsworth, CA (US);
James H Ermer, Los Angeles, CA (US);
Vijay K Kapur, Northridge, CA (US);
Assignee:
Atlantic Richfield Company, Los Angeles, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
136260 ; 136264 ; 136265 ; 136256 ; 357 16 ; 357 30 ;
Abstract
A thin film photovoltaic device having first layer of copper indium selenide, a second layer of cadmium sulfide having a thickness less than 2500 angstroms, and a third layer of conducting wide bandgap semiconductor such as zinc oxide. The transparent third layer allows good transmission of blue light to the junction region while fully depleting the junction area to improve device voltage.