The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 1986
Filed:
Dec. 21, 1984
Raj Jayaraman, Brookline, MA (US);
Barry M Singer, New York, NY (US);
North American Philips Corporation, New York, NY (US);
Abstract
A combined lateral MOS/bipolar transistor includes an intermediate semiconductor layer of the same conductivity type as the channel region which extends laterally from the channel region to beneath the drain contact region of the device. Additionally, a floating semiconductor layer of opposite conductivity type to that of the channel region is provided between the intermediate layer and the substrate of the device. Both the intermediate layer and the substrate are relatively lightly doped, to effectively isolate the floating layer from above and below. This structure substantially improves the operating chartacteristics of the device, thus permitting operation in both the source-follower and common-source modes, while also providing a compact structure which features a relatively low normalized 'on' resistance.