The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 1986

Filed:

Jul. 02, 1984
Applicant:
Inventors:

Mousa H Ishaq, Essex Junction, VT (US);

Wendell P Noble, Jr, Milton, VT (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
156656 ; 156657 ; 1566591 ; 29571 ; 2957 / ; 29578 ; 148-15 ;
Abstract

A process is provided for making a conductive structure for a semiconductor circuit, such as a one device dynamic random access memory cell, which includes the steps of depositing a conductive layer on a surface of a semiconductor substrate having a given type conductivity spaced from a storage node, depositing a layer of polysilicon over the conductive layer, depositing a layer of photoresist over the polysilicon layer, defining an opening in the photoresist layer and implanting ions of a conductivity type opposite to that of the given type conductivity through the opening and the polysilicon layer into the semiconductor substrate to form therein a conductive pocket or region having the opposite type conductivity resulting in, e.g., a highly conductive bit/sense line of a memory cell.


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