The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 1986
Filed:
Jun. 22, 1983
Hsiang-Yi D Law, Agoura, CA (US);
Edward A Rezek, Redondo Beach, CA (US);
TRW Inc., Redondo Beach, CA (US);
Abstract
A monolithic device, including a substrate, a semiconductor laser formed in the substrate, and a metal-insulator-semiconductor field-effect transistor (MISFET) also formed in the substrate, in such a manner as to facilitate the use of planar fabrication techniques. In a first disclosed embodiment, the device is formed on an n+ substrate and the MISFET is operated in inversion mode. In a second embodiment, an n+ substrate is also employed, but the structure includes a semi-insulating layer to confine current-carrier flow in the MISFET, which is operated in depletion mode. In a third embodiment, a semi-insulating substrate is employed, and the laser is of the buried heterostructure type.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile