The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 1986
Filed:
Feb. 15, 1985
Applicant:
Inventors:
Bernard J Curtis, Gattikon, CH;
Hans R Brunner, Steinmaur, CH;
Assignee:
RCA Corporation, Princeton, NJ (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23F / ; B44C / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156655 ; 156656 ; 1566591 ; 156657 ; 2041 / ; 252 791 ;
Abstract
Polycide structures are etched with silicon tetrachloride. The etch is preferably carried out at a pressure of about 20 to 60 mtorr and overetching to remove stringers is then carried out at an increased pressure, i.e. at least about 100 mtorr. There is obtained an anisotropic etch with substantially no stringers or linewidth loss. When selectivity of etch vis-a-vis an underlying layer of gate oxide must be enhanced, from about 60 to 90 percent by volume of the silicon tetrachloride is replaced with chlorine just prior to completion of the etch.