The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 1986

Filed:

Oct. 05, 1984
Applicant:
Inventors:

Bernard R Weinberger, Plainsboro, NJ (US);

Harry W Deckman, Clinton, NJ (US);

Eli Yablonovitch, Scotch Plains, NJ (US);

Assignee:

Exxon Research and Engineering Co., Florham Park, NJ (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148 333 ; 148D / ; 29590 ; 357 52 ; 427 82 ; 427155 ; 4272556 ;
Abstract

A method is described for producing an electronically passivated stable surface on silicon wafers. The passivation technique consists of first fluorinating the surface of a crystalline silicon wafer under inert atmospheric conditions. Such a treatment may consist of either a vapor phase or liquid phase application of HF at room temperature. The surface fluorinated wafer is then maintained in an inert atmosphere and a thin coating of an organic solid is applied to the wafer which does not disturb the underlying passivated silicon surface. The wafer may then be further processed into a variety of different devices.


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