The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 1986
Filed:
Jun. 08, 1984
Susumu Iesaka, Tokyo, JP;
Kabushiki Kaisha Toshiba, , JP;
Abstract
A guard-ring-equipped Schottky barrier diode, which has a shortened reverse recovery time and an increased withstand voltage, has a Schottky barrier layer formed on a semiconductor substrate, of a first conductivity type, and a guard ring, which has a second conductivity type, formed on surface of the substrate isolated from but surrounding the periphery of the barrier layer. An insulative film with an opening over part of the guard ring is formed over the region between the edge of the Schottky barrier layer and the guard ring. A high-resistance layer is formed in this opening and is connected with the Schottky barrier layer by a metal electrode. The width of the substrate between the guard ring and the edge of the barrier layer is less than the sum of the widths of the depletion layers of the guard ring and the barrier layer at the time when the lower voltage of either the barrier layer breakdown voltage or the guard ring breakdown voltage is applied.