The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 1986
Filed:
Jun. 27, 1983
Beverly L Olsen, Brookfield, CT (US);
Augustus C Ouano, Santa Cruz, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A lift-off process for depositing a metallurgy layer on a substrate wherein the improvement is the use of a sacrificial masking layer that is substantially unaffected by exposure to high intensity radiation. The process includes the steps of (1) preparing a resin mixture of a polyaryl sulfone polymer, and a compound of the following: ##STR1## wherein R.sub.1 is a methyl ethyl or an .alpha. branched alkyl group from 3 to 10 atoms, R.sub.2 is a hydrogen, methyl, ethyl or a branched alkyl group of from 3 to 10 carbon atoms, and X has a value of 1 to 6, and Z is an aliphatic hydrocarbon of the formula C.sub.5 H.sub.8 the compound being present in the amount of from 0.5 to 3.5% by weight of the polyaryl sulfone resin, (2) depositing a blanket sacrificial masking layer of the resin mixture on the surface of the semiconductor wafer, (3) selectively removing areas of the blanket masking layer to define the image of the desired metallurgy pattern, (4) depositing a blanket layer of conductive metal, and (5) exposing the resultant coated wafer to a solvent for the polyaryl sulfone resin to remove the masking layer in all the overlying metal areas.