The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 1986
Filed:
Oct. 24, 1984
Applicant:
Inventors:
Siegfried Leibenzeder, Erlangen, DE;
Christine Heindl, Mantel, DE;
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148171 ; 148172 ; 148173 ; 2956 / ;
Abstract
A method for the manufacture of A.sub.3 B.sub.5 light-emitting diodes, particularly of light-emitting (Ga,Al)As diodes with Te and Zn as doping materials is provided. A first n-doped GaAlAs layer is epitaxially applied on a GaAs substrate from an n-doped (S,Se,Te) Ga,Al,As melt and after an interim precipitation without contact with the GaAs substrate, preferably on an auxiliary substrate, a GaAlAs layer p-doped with Zn or Mg is deposited on the substrate already epitaxially coated with the n-GaAlAs layer. Efficient light-emitting diodes are obtained.