The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 1986
Filed:
Jul. 26, 1984
Michael J Moore, Poynton, GB;
David H Paxman, Redhill, GB;
U.S. Philips Corporation, New York, NY (US);
Abstract
A semiconductor device, such as a gate turn-off thyristor, has, at a major surface of a semiconductor body a plurality of electrode fingers alternately contacting opposite conductivity type regions (e.g. the cathode and gate) of the semiconductor body. In order to save useful semiconductor area and to allow an improved electrode geometry bonding pads for the electrodes are formed at a level above the electrodes. An insulating layer separates the bonding pads and the electrodes. A first bonding pad contacts a first set of electrode fingers through a first set of windows in the insulating layer and a second bonding pad contacts a second set of electrode fingers through a second set of windows. In operation, the voltage drop along each electrode finger of a set is substantially equal. A third bonding pad may also contact the second electrode set through a third set of windows in the insulating layer.