The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 1986
Filed:
May. 11, 1984
Yoshifumi Katayama, Tokorozawa, JP;
Yasuhiro Shiraki, Hino, JP;
Ken Yamaguchi, Higashikurume, JP;
Yoshimasa Murayama, Koganei, JP;
Yasushi Sawada, Kokubunji, JP;
Toshiyuki Usagawa, Kokubunji, JP;
Eiichi Maruyama, Kodaira, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In a semiconductor device having at least a first semiconductor layer and a second semiconductor layer which are arranged so as to form a heterojunction, an edge of a conduction band of the first semiconductor layer being positioned lower in energy than an edge of a conduction band of the second semiconductor layer in the vicinity of the heterojunction, at least one pair of electrodes which are electronically connected with the first semiconductor layer, and means to control carriers induced in the vicinity of the heterojunction; a semiconductor device characterized in that a low impurity concentration region is comprised in at least the part of the first semiconductor layer between the pair of electrodes, that a region adjoining each of the pair of electrodes is a high impurity concentration region, and that at least one layer containing an impurity which has a conductivity type identical or opposite to that of an impurity contained in the aforementioned regions is comprised in the first semiconductor layer.