The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 1986
Filed:
Apr. 19, 1985
Applicant:
Inventors:
Gary Czupryna, Sharon, MA (US);
Samuel Natansohn, Sharon, MA (US);
Robert A Long, Towanda, PA (US);
Robin W Munn, Sayre, PA (US);
Assignees:
GTE Products Corporation, Stamford, CT (US);
GTE Laboratories Incorporated, Waltham, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B / ;
U.S. Cl.
CPC ...
423344 ; 423406 ; 501 97 ;
Abstract
A process for the growth of silicon nitride whiskers consists of reacting a mixture of carbon and silicon dioxide powders at elevated temperature in a stream of nitrogen, said reaction mixture containing small amounts of metals such as chromium, magnesium, and nickel which promote the growth of silicon nitride whiskers by vapor phase transport. The whiskers obtained as a result of this invention are of much higher purity than those obtained by prior art.