The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 1986
Filed:
Jul. 03, 1985
Applicant:
Inventors:
Yok Chen, Oak Ridge, TN (US);
Roberto Gonzalez, Madrid, ES;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C09K / ;
U.S. Cl.
CPC ...
2523 / ; 423635 ; 423636 ; 423647 ;
Abstract
Refractory oxide crystals having high-quantum efficiency and high thermal stability for use as broadly tunable laser host materials. The crystals are formed by removing hydrogen from a single crystal of the oxide material to a level below about 10.sup.12 protons per cm.sup.3 and subsequently thermochemically reducing the oxygen content of the crystal to form sufficient oxygen anion vacancies so that short-lived F.sup.+ luminescence is produced when the crystal is optically excited.
Chen, Yok. (1986). Refractory oxide hosts for a high power, broadly tunable laser with high (U.S. Patent No. 4604225). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4604225
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile