The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 1986

Filed:

May. 07, 1984
Applicant:
Inventor:

Jan G Dil, Eindhoven, NL;

Assignee:

U.S. Philips Corporation, New York, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357-4 ; 357 16 ; 357 17 ;
Abstract

When two indirect only slightly different semiconductor materials having a suitable band gap, for example, AlAs and Al.sub.0.8 Ga.sub.0.2 As, are grown epitaxially one onto the other in layers of a few unit cell layers thick, the electronic band structures are folded so that the indirect minimum of the conduction band is displaced from the edge of the Brillouin zone to the center. The two indirect materials then constitute a superlattice with a band transition with a band gap of 2.2 eV.


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