The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 1986
Filed:
Mar. 23, 1982
Kenichi Kikuchi, Osaka, JP;
Michitomo Iiyama, Osaka, JP;
Toshiki Ebata, Osaka, JP;
Hideki Hayashi, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A process for fabricating a Schottky-barrier gate field effect transistor, consists of forming an active layer of one electrically conductive type semiconductor crystal on one surface of a high resistivity or semi-insulating semiconductor crystal substrate, the active layer having a first active layer whose thickness and carrier concentration are so chosen as to give a predetermined value of pinch-off voltage and a second active layer having a carrier concentration which is substantially equal to that of the first active layer and having a larger thickness than that of the first active layer and provided on both sides of the first active layer; the first shallow active layer is provided with a Schottky-barrier gate electrode correctly positioned on the surface part and the second thick active layer is provided with a source electrode and drain electrode on the surface part.