The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 1986
Filed:
May. 01, 1985
Brian H Desilets, Wappingers Falls, NY (US);
Thomas A Gunther, Hopewell Junction, NY (US);
Charles J Hendricks, Wappingers Falls, NY (US);
John H Keller, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An improved plasma reactor for uniformly etching a large number of semiconductor wafers at a reduced plasma potential includes, in one embodiment, a grounded plate mounted intermediate the cathode and the top plate of a reactor chamber, the top plate and the chamber walls forming the reactor anode. The grounded plate is spaced apart from the chamber top plate a distance sufficient to allow a plasma to be established between the grounded plate and the top plate, and the distance between the grounded plate and the cathode is large enough not to disturb the field in the proximity of the wafers being etched. The plate can be apertured to facilitate etchant gas flow. According to another embodiment of the invention at least two grounded plates are employed, spaced apart from each other and from the upper surface of the reactor plasma chamber.